B.E. Electrical Engineering:Microelectronics Technology

Thapar University
In Patiala

Price on request
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Important information

  • Bachelor
  • Patiala
  • Duration:
    4 Years

Important information

Where and when

Starts Location
On request
Thapar University P.O Box 32, 147004, Punjab, India
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Course programme

First Year: Semester I

Mathematics I
Engineering graphics
Computer Programming
Solid Mechanics
Communication Skills

First Year: Semester-II

Mathematics II
Manufacturing Process
Electrical and Electronic Science
Organizational Behavior

Second Year- Semester - I

Semiconductor Devices
Measurement Science and Techniques
Digital Electronic Circuits
Circuit Theory
Electromechanical Energy conversion
Electromagnetic Fields
Human Values, Ethics and IPR

Second Year- Semester – II

Numerical and Statistical Methods
Fluid Mechanics
Power Generation and Economics
Analog Electronic Circuits
Electrical and Electronic Measurements
Transmission and Distribution of Power
Environmental Studies

Third Year- Semester – I

Power Electronics
Asynchronous Machines
Switch gear and Protection
Optimization Techniques
Engineering Economics
Summer Training (6 Weeks after 2nd year during summer vacation)

Third Year- Semester – II

Total Quality Management
Control Systems
Synchronous Machines
Power System Analysis
Flexible AC Transmission Systems

Fourth Year- Semester – I

High Voltage Engineering
Operation and Control of Power Systems
Electric Drives
Intelligent Algorithms in Power Systems

Fourth Year- Semester – II

Project Semester
Industrial Training

Microelectronics Technology

Integrated Circuits: Introduction and advantages, effects of ICs on industry, scales of integration. Hybrid , Monolithic and ICs, VLSI, ULSI.

Growth of Single Crystals of Silicon: Growth from melt using Czochralski?s method, Intrinsic and doped single crystals. Zone refining. Epitaxial layer growth. Types of epitaxy: VPE, MBE, MOCVD, Defects in epitaxial layers and their removal.

Wafer preparation: Shaping operations, surface grinding, slicing, lapping, etching, polishing.

Fabrication Processes: Diffusion: Impurity diffusion in a semiconductor crystal. Fick?s Laws, Gaussian and Complementary Error Function Distribution of Impurities. Design of junction diode, transistor, FET and MOSFETs., ion-implantation Oxidation, plasma oxidation, Lithography ; Photolithography, Ebeam x-ray and ion beam lithography, etching dry and wet and metalization.

Packaging of ICs: Wafer probing, dicing, die mounting, wire bounding, Mountings in packages using Dual-inl-line (DIP) or TO packages. Packages using surface-mount-technology (SMT),

Computer aided Testing: Testing & Techniques.

MOS & CMOS Technology: Polysilicon gates and Well structures.

Recent Trends in Technology & Packaging VLSI Assembly Technology

Achievements for this centre

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