B.E. Electronics(Instrumentation Control):Device Modelling and SimulationThapar University
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First Year: Semester I Mathematics I Engineering graphics Computer Programming Physics Solid Mechanics Communication Skills First year: Semester II Mathematics II Manufacturing Process Chemistry Electrical and Electronic Science Thermodynamics Organizational Behavior Second year: Semester I Electromagnetic Fields Human Values, Ethics and IPR Semiconductor Devices Measurement Science and Techniques Circuit Theory Digital Electronic Circuits Electrical Machines Second year: Semester II Fluid Mechanics Computer System Architecture Optimization Techniques Analog Electronic Circuits Numerical and Statistical Methods Electrical and Electronic Measurements Environmental Studies Third year: Semester I Elements and Analysis of Instrumentation System Analytical Instrumentation Signals and Systems Power Electronics Microprocessors Biomedical instrumentation Summer Training Third year: Semester II Data Acquisition Systems Industrial Measurements Process Dynamics and Control Control Systems Total Quality Management Fourth year: Semester I Advance Process Control Virtual Instrumentation Instrumentation System Design Engineering Economics Microelectronics and ICs Fourth year: Semester II Project Semester Project Industrial Training(6 weeks) Device Modelling and Simulation Introduction & review: Principle of circuit simulation and its objectives, Course Goals, Semiconductor Materials, Device building blocks: Schottkey ohmic Contacts, P-n Junction Introduction to spice: DC, small signal, large signal, high frequency and noise models of diodes; Measurements of diode model-parameters. Modes of operation, current, voltage & power gains, I/p-o/p impedencies. BJT Modelling: General bias modes of transistor model, Ebers- Mall Model, Gummel poon model, BJT Models in SPICE, BJT parameter extraction, BJT breakdown. Forward active mode of op. DC, small signal, high frequency and noise models of bipolar junction transistors, DC, small signal,high frequency and noise models of BJTs Metal Semiconductor FET: Structure Principle of opn JFET, MESFET, JFET and MESFETs, extraction of JFET and MESFET model parameters, Design of MESFET Modelling and its models in SPICE, HFET, HFET Modeling. DC, small signal, high frequency and noise models of MOSFET?s devices scaling, short and narrow channel MOSFET?s, MOSFET Channel mobility model, level-1 and level-2 large signal MOSFET Models, extraction of MOSFET model-parameters. Circuit models: Small signal model (hybrid pi model) Large signal model ( charge signal model) Spice model Software package needed for Lab: Tanner Tools. Laboratory: Understanding of DC, AC, transient analysis, simulating I-V characteristics of a diode, plotting of drain characteristics of MOSFET, plotting of transfer characteristics of MOSFET, plotting of transfer characteristics of NMOS, plotting of transfer characteristics of CMOS inverter.