M.Tech. VLSI Design & CAD:Memory Design and Testing

First Semester I

Physics of Semiconductor Devices
IC Fabrication Technology
Digital VLSI Design
CAD Systems Environment
Research Methodology


Second Semester

Analog IC Design
Hardware Description Languages
Embedded Systems


Third Semester

Seminar
Thesis starts

Fourth Semester

Thesis

Memory Design and Testing

Introduction to Memory Chip Design: Internal Organization of Memory Chips, Memory Cell Array, Peripheral Circuit, I/O Interface Categories of Memory Chip, History of Memory-Cell Development, Basic Operation of The 1-T Cell, Basic Operation of a SRAM Cell, Trends in Non-Volatile Memory Design and Technology, Basic Operation of Flash Memory Cells, Advances in Flash-Memory Design and Technology,

Basics of RAM Design and Technology: Devices, NMOS Static Circuits, NMOS Dynamic Circuits, CMOS Circuits, Basic Memory Circuits, Scaling Law.

DRAM Circuits: High-Density Technology, High-Performance Circuits, Catalog Specifications of the Standard DRAM, Basic Configuration and Operation of the DRAM Chip, Chip Configuration, Address Multiplexing, Fundamental Chip, Multi-divided Data Line and Word Line, Read and Relevant Circuits, W rite and Relevant Circuits, Refresh-Relevant Circuits, Redundancy Techniques, On-Chip Testing Circuits, High Signal-to-Noise Ratio DRAM Design and Technology, Trends in High S/N Ratio Design, Data-Line Noise Reduction, Noise Sources.

On-Chip Voltage Generators: Substrate-Bias Voltage (VBB) Generator, Voltage Up-Converter, Voltage Down-Converter, Half-VDD Generator, Examples of Advanced On-Chip Voltage Generators.

High-Performance Subsystem Memories: Hierarchical Memory Systems, Memory-Subsystem Technologies, High-Performance Standard DRAMs, Embedded Memories.

Low-Power Memory Circuits: Sources and Reduction of Power Dissipation in a RAM Subsystem and Chip, Low-Power DRAM Circuits, Low-Power SRAM Circuits.

Ultra-Low-Voltage Memory Circuits: Design Issues for Ultra-Low-Voltage RAM Circuits, Reduction of the Subthreshold Current, Stable Memory-Cell Operation, Suppression of, or Compensation for, Design Parameter Variations, Power-Supply Standardization, Ultra-Low-Voltage DRAM Circuits, Ultra-Low-Voltage SRAM Circuits, Ultra-Low-Voltage SOI Circuits