B.E. Electrical Engineering:Microelectronics Technology

Thapar University
In Patiala

Price on request
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Important information

Typology Bachelor
Location Patiala
Duration 4 Years
  • Bachelor
  • Patiala
  • Duration:
    4 Years
Description

Venues

Where and when

Starts Location
On request
Patiala
Thapar University P.O Box 32, 147004, Punjab, India
See map
Starts On request
Location
Patiala
Thapar University P.O Box 32, 147004, Punjab, India
See map

Course programme

First Year: Semester I

Mathematics I
Engineering graphics
Computer Programming
Physics
Solid Mechanics
Communication Skills

First Year: Semester-II

Mathematics II
Manufacturing Process
Chemistry
Electrical and Electronic Science
Thermodynamics
Organizational Behavior


Second Year- Semester - I

Semiconductor Devices
Measurement Science and Techniques
Digital Electronic Circuits
Circuit Theory
Electromechanical Energy conversion
Electromagnetic Fields
Human Values, Ethics and IPR

Second Year- Semester – II

Numerical and Statistical Methods
Fluid Mechanics
Power Generation and Economics
Analog Electronic Circuits
Electrical and Electronic Measurements
Transmission and Distribution of Power
Environmental Studies

Third Year- Semester – I

Power Electronics
Asynchronous Machines
Switch gear and Protection
Microprocessors
Optimization Techniques
Engineering Economics
Summer Training (6 Weeks after 2nd year during summer vacation)


Third Year- Semester – II

Total Quality Management
Control Systems
Synchronous Machines
Power System Analysis
Flexible AC Transmission Systems


Fourth Year- Semester – I

High Voltage Engineering
Operation and Control of Power Systems
Electric Drives
Intelligent Algorithms in Power Systems


Fourth Year- Semester – II

Project Semester
Project
Industrial Training

Microelectronics Technology

Integrated Circuits: Introduction and advantages, effects of ICs on industry, scales of integration. Hybrid , Monolithic and ICs, VLSI, ULSI.

Growth of Single Crystals of Silicon: Growth from melt using Czochralski?s method, Intrinsic and doped single crystals. Zone refining. Epitaxial layer growth. Types of epitaxy: VPE, MBE, MOCVD, Defects in epitaxial layers and their removal.

Wafer preparation: Shaping operations, surface grinding, slicing, lapping, etching, polishing.

Fabrication Processes: Diffusion: Impurity diffusion in a semiconductor crystal. Fick?s Laws, Gaussian and Complementary Error Function Distribution of Impurities. Design of junction diode, transistor, FET and MOSFETs., ion-implantation Oxidation, plasma oxidation, Lithography ; Photolithography, Ebeam x-ray and ion beam lithography, etching dry and wet and metalization.

Packaging of ICs: Wafer probing, dicing, die mounting, wire bounding, Mountings in packages using Dual-inl-line (DIP) or TO packages. Packages using surface-mount-technology (SMT),

Computer aided Testing: Testing & Techniques.

MOS & CMOS Technology: Polysilicon gates and Well structures.

Recent Trends in Technology & Packaging VLSI Assembly Technology


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