B.E. Electronics & Comm. Engg:Device Modelling and Simulation

Thapar University
In Patiala

Price on request
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Important information

Typology Bachelor
Location Patiala
Duration 4 Years
  • Bachelor
  • Patiala
  • Duration:
    4 Years


Where and when

Starts Location
On request
Thapar University P.O Box 32, 147004, Punjab, India
See map
Starts On request
Thapar University P.O Box 32, 147004, Punjab, India
See map

Course programme

First Year: Semester I

Mathematics I
Engineering graphics
Computer Programming
Solid Mechanics
Communication Skills

First year: Semester II

Mathematics II
Manufacturing Process
Electrical and Electronic Science
Organizational Behavior

Second year: Semester I

Numerical and Statistical Methods
Measurement Science and Techniques
Electromagnetic Fields
Semiconductor Devices
Signals and Systems
Digital Electronic Circuits
Human Values, Ethics and IPR

Second year: Semester II

Optimization Techniques
Analog Electronic Circuits
Networks and Transmission Lines
Electrical Engineering Materials
Analog Communication Systems
Data Structure and Information Technology
Environmental Studies

Third year: Semester I

Digital Signal Processing for Communications
VLSI Circuit Design
Digital Communication Systems
Microelectronics Technology
Linear Integrated Circuits and Applications
Summer Training(6 weeks)

Third year: Semester II

Project Semester
Industrial Training(6 weeks)

Fourth year: Semester I

Antenna and Wave Propagation
Modern Control Engineering
Wireless and Mobile Communication Systems
Microwave Engineering
Engineering Economics

Fourth year: Semester II

Optical Communication Systems
Advanced Communication Systems
HDL Based Digital Design
Total Quality Management
Minor Project

Device Modelling and Simulation

ntroduction & review: Principle of circuit simulation and its objectives, Course Goals, Semiconductor Materials, Device building blocks: Schottkey ohmic Contacts, P-n Junction

Introduction to spice: DC, small signal, large signal, high frequency and noise models of diodes; Measurements of diode model-parameters. Modes of operation, current, voltage & power gains, I/p-o/p impedencies.

BJT Modelling: General bias modes of transistor model, Ebers- Mall Model, Gummel poon model, BJT Models in SPICE, BJT parameter extraction, BJT breakdown. Forward active mode of op. DC, small signal, high frequency and noise models of bipolar junction transistors, DC, small signal,high frequency and noise models of BJTs

Metal Semiconductor FET: Structure Principle of opn JFET, MESFET, JFET and MESFETs, extraction of JFET and MESFET model parameters, Design of MESFET Modelling and its models in SPICE, HFET, HFET Modeling. DC, small signal, high frequency and noise models of MOSFET�s devices scaling, short and narrow channel MOSFET�s, MOSFET Channel mobility model, level-1 and level-2 large signal MOSFET Models, extraction of MOSFET model-parameters.

Circuit models: Small signal model (hybrid pi model) Large signal model ( charge signal model) Spice model

Software package needed for Lab: Tanner Tools.

Laboratory: Understanding of DC, AC, transient analysis, simulating I-V characteristics of a diode, plotting of drain characteristics of MOSFET, plotting of transfer characteristics of MOSFET, plotting of transfer characteristics of NMOS, plotting of transfer characteristics of CMOS inverter.

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