B.E. Electronics & Comm. Engg:Device Modelling and Simulation
Bachelor
In Patiala
Description
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Type
Bachelor
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Location
Patiala
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Duration
4 Years
Facilities
Location
Start date
Start date
Reviews
Course programme
First Year: Semester I
Mathematics I
Engineering graphics
Computer Programming
Physics
Solid Mechanics
Communication Skills
First year: Semester II
Mathematics II
Manufacturing Process
Chemistry
Electrical and Electronic Science
Thermodynamics
Organizational Behavior
Second year: Semester I
Numerical and Statistical Methods
Measurement Science and Techniques
Electromagnetic Fields
Semiconductor Devices
Signals and Systems
Digital Electronic Circuits
Human Values, Ethics and IPR
Second year: Semester II
Optimization Techniques
Analog Electronic Circuits
Networks and Transmission Lines
Electrical Engineering Materials
Analog Communication Systems
Data Structure and Information Technology
Environmental Studies
Third year: Semester I
Digital Signal Processing for Communications
Microprocessors
VLSI Circuit Design
Digital Communication Systems
Microelectronics Technology
Linear Integrated Circuits and Applications
Summer Training(6 weeks)
Third year: Semester II
Project Semester
Project
Industrial Training(6 weeks)
Fourth year: Semester I
Antenna and Wave Propagation
Modern Control Engineering
Wireless and Mobile Communication Systems
Microwave Engineering
Engineering Economics
Fourth year: Semester II
Optical Communication Systems
Advanced Communication Systems
HDL Based Digital Design
Total Quality Management
Minor Project
Device Modelling and Simulation
ntroduction & review: Principle of circuit simulation and its objectives, Course Goals, Semiconductor Materials, Device building blocks: Schottkey ohmic Contacts, P-n Junction
Introduction to spice: DC, small signal, large signal, high frequency and noise models of diodes; Measurements of diode model-parameters. Modes of operation, current, voltage & power gains, I/p-o/p impedencies.
BJT Modelling: General bias modes of transistor model, Ebers- Mall Model, Gummel poon model, BJT Models in SPICE, BJT parameter extraction, BJT breakdown. Forward active mode of op. DC, small signal, high frequency and noise models of bipolar junction transistors, DC, small signal,high frequency and noise models of BJTs
Metal Semiconductor FET: Structure Principle of opn JFET, MESFET, JFET and MESFETs, extraction of JFET and MESFET model parameters, Design of MESFET Modelling and its models in SPICE, HFET, HFET Modeling. DC, small signal, high frequency and noise models of MOSFET�s devices scaling, short and narrow channel MOSFET�s, MOSFET Channel mobility model, level-1 and level-2 large signal MOSFET Models, extraction of MOSFET model-parameters.
Circuit models: Small signal model (hybrid pi model) Large signal model ( charge signal model) Spice model
Software package needed for Lab: Tanner Tools.
Laboratory: Understanding of DC, AC, transient analysis, simulating I-V characteristics of a diode, plotting of drain characteristics of MOSFET, plotting of transfer characteristics of MOSFET, plotting of transfer characteristics of NMOS, plotting of transfer characteristics of CMOS inverter.
B.E. Electronics & Comm. Engg:Device Modelling and Simulation