B.E. Electronics(Instrumentation Control):Device Modelling and Simulation
Bachelor
In Patiala
Price on request
Description
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Type
Bachelor
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Location
Patiala
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Duration
4 Years
Facilities
Location
Start date
Patiala
(Punjab)
See map
Thapar University P.O Box 32, 147004
Start date
On request
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Course programme
First Year: Semester I
Mathematics I
Engineering graphics
Computer Programming
Physics
Solid Mechanics
Communication Skills
First year: Semester II
Mathematics II
Manufacturing Process
Chemistry
Electrical and Electronic Science
Thermodynamics
Organizational Behavior
Second year: Semester I
Electromagnetic Fields
Human Values, Ethics and IPR
Semiconductor Devices
Measurement Science and Techniques
Circuit Theory
Digital Electronic Circuits
Electrical Machines
Second year: Semester II
Fluid Mechanics
Computer System Architecture
Optimization Techniques
Analog Electronic Circuits
Numerical and Statistical Methods
Electrical and Electronic Measurements
Environmental Studies
Third year: Semester I
Elements and Analysis of Instrumentation System
Analytical Instrumentation
Signals and Systems
Power Electronics
Microprocessors
Biomedical instrumentation
Summer Training
Third year: Semester II
Data Acquisition Systems
Industrial Measurements
Process Dynamics and Control
Control Systems
Total Quality Management
Fourth year: Semester I
Advance Process Control
Virtual Instrumentation
Instrumentation System Design
Engineering Economics
Microelectronics and ICs
Fourth year: Semester II
Project Semester
Project
Industrial Training(6 weeks)
Device Modelling and Simulation
Introduction & review: Principle of circuit simulation and its objectives, Course Goals, Semiconductor Materials, Device building blocks: Schottkey ohmic Contacts, P-n Junction
Introduction to spice: DC, small signal, large signal, high frequency and noise models of diodes; Measurements of diode model-parameters. Modes of operation, current, voltage & power gains, I/p-o/p impedencies.
BJT Modelling: General bias modes of transistor model, Ebers- Mall Model, Gummel poon model, BJT Models in SPICE, BJT parameter extraction, BJT breakdown. Forward active mode of op. DC, small signal, high frequency and noise models of bipolar junction transistors, DC, small signal,high frequency and noise models of BJTs
Metal Semiconductor FET: Structure Principle of opn JFET, MESFET, JFET and MESFETs, extraction of JFET and MESFET model parameters, Design of MESFET Modelling and its models in SPICE, HFET, HFET Modeling. DC, small signal, high frequency and noise models of MOSFET?s devices scaling, short and narrow channel MOSFET?s, MOSFET Channel mobility model, level-1 and level-2 large signal MOSFET Models, extraction of MOSFET model-parameters.
Circuit models: Small signal model (hybrid pi model) Large signal model ( charge signal model) Spice model
Software package needed for Lab: Tanner Tools.
Laboratory: Understanding of DC, AC, transient analysis, simulating I-V characteristics of a diode, plotting of drain characteristics of MOSFET, plotting of transfer characteristics of MOSFET, plotting of transfer characteristics of NMOS, plotting of transfer characteristics of CMOS inverter.
B.E. Electronics(Instrumentation Control):Device Modelling and Simulation
Price on request