B.Sc. (Electronics)

The syllabus is divided into 3 units.

Unit I
Classification of Solids on the basis of energy band diagram, conductors, Insulators,
Semi-conductors, Types of semi-conductors, current in semi-conductors, ideal diode, V-I
Characteristics of ideal diode, PN junction diode, Diasing of PN junction diode, junctioncapicitance,
Current in PN junction diode. Application of PN junction diode as a switch
as rectifiers-Half wave rectifier, Full wave rectifier and bridge rectifier, Clamper and
clipping circuits, Filter circuits, L,C, L-C, PIE section filters, Zener diode, Multiplier
circuits.
Unit II
Bipolar Junction Transistor (BJT), Four regions of operation of BJT, Transistor current
component, Transistor as an amplifier, BJT in CE, CB, CC configurations, I/P and O/P
characteristics, I/P resistance, O/P resistance, Current gain, Voltage gain, Power gain.
Unit III
Transistor at low frequencies, Graphical analysis of CE configuration, Transistor hybrid
model, conversion formulate for the parameters of the three transistor configuration.