M.E. Electronics & Comm. Engg:Semiconductor Device Modeling

First Semester

Advanced Digital signal Processing
Advanced Optical Communication Systems
Research Methodology
Digital VLSI Design
Microelectronics Technology

Second Semester

Advanced Solid State Devices
Advanced Communication Techniques
Hardware Description Languages


Third Semester

CDMA and GSM Systems
Seminar
Thesis (starts)


Fourth Semester

Thesis


Semiconductor Device Modeling

Review of Semiconductor Physics: Basic Semiconductor Equations: Poisson's equations, current continuity equations, and boundary conditions

The Physical Parameters: doping profiles, carrier mobility, generation-recombination rates, bandgap narrowing effect, other physical parameters

Numerical Solution Methods: Scaling of variables and parameters, finite difference scheme, discretization of Poisson's and current continuity equations, truncation errors, discretization of time-dependent problems, designing a mesh. The Newton-Raphson method of solving nonlinear algebraic equations, direct methods of matrix inversion, iterative and other methods, rate of convergence, error estimation

Examples of Actual Device Modeling: numerical treatment of boundary conditions; general procedures of device modeling, short channel effects in MOSFET's, breakdown voltage in Si-P-Pai-neu diodes, permeable base transistor (PBT)

Monte Carlo Simulation: the Boltzmann transport equation, electron motion in the momentum space, determination of free-flight time, selection of scattering processes, scattering rates, selection of momentum states after collisions, mean velocity and mean energy, Monte Carlo Simulation of BJT's, Nonisothermal and Hot-Carrier Problems Heat transfer equation, discretization of energy balance equations, applications to hot-carrier phenomena

Modeling of Heterojunction Devices: bandgap engineering, bandgap offset at abrupt heterojunctions, modified current continuity equations, material parameters; heterojunction bipolar transistors (HBT's

The Schrodinger-Poisson solver: modeling of inversion layer charges in MOS devices.